The Company's layer transfer technology can be successfully applied to fabricate GaN on Sapphire, or other suitable substrates. The primary applications for this engineered substrate are the high brightness LED (HB-LED) and LD (lased diode) markets.
SiGen's layer transfer process is applicable for creating seed layers of GaN or SiC on suitable substrates for LED device growth. The cost of GaN and SiC are very high and the ability to use thin slices rather than thick (400um) slices of material provide significant cost savings.
Total Bright LED Market Size
LED market is $3B in 2006.