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	High Temperature Oxygen Out-Diffusion from the Interfacial SiOx Bond Layer in Direct Silicon Bonded (DSB) Substrates
	Germanium-on-Insulator Substrates by Wafer Bonding
	Layer-Transfer Process Modifications for Fabricating Hybrid Crystal Orientation Engineered Substrates
	Optoelectroinc Substrates by SiGen NanoTec—A General Layer-Transfer (LT) Approach
	Multi-stack SOI: Processing and characterization highlights
	Plasma-Activated Bonding, Controlled Cleave Process, and Non-Contact Smoothing for Germanium-on-Insulator (GeOI) Manufacturing
	Fully Integrated Plasma-Activated Bonding (PAB) for High Volume SOI Substrate Manufacturing Process
	Plasma Activated Bonding For Silicon on Glass (SOG)
	Options at the 45nm node include engineered substrates
	Layer-Transfer Quality Cleave Principles
	Ultra-thin SOI Wafer Fabrication Technologies for Fully Depleted CMOS
	NanoCleave® Application to Three Dimensional Integrated Circuits (3D ICs)

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